2N6058

Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High gain ・High current ・High dissipation ・Complement to type 2N5883/2N5884 APPLICATIONS ・They are intended for use in power linear and low frequency switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6058/2N6059 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO PARAMETER Collector-base voltage Collector-emitter voltage 2N6058 2N6059 2N6058 2N6059 Open collector Open base CONDITIONS Open emitter VALUE 80 100 80 100 5 12 20 0.2 TC=25℃ 150 200 -65~200 V A A mA W ℃ ℃ V UNIT V VCEO VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6058/2N6059 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(sus) PARAMETER Collector-emitter sustaining voltage 2N6058 IC=0.1A ;IB=0 2N6059 IC=6A IB=24mA IC=12A IB=120mA IC=12A IB=120mA IC=6A ; VCE=3V 2N6058 ICEO Collector cut-off current 2N6059 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Trainsistion frequency VCE=50V; IB=0 VEB=5V; IC=0 IC=6A ; VCE=3V IC=12A ; VCE=3V IC=5A ;VCE=3V;f=1MHz 750 100 4 MHz 2 mA VCE=40V; IB=0 1 mA 100 2 3 4 2.8 V V V V V CONDITIONS MIN 80 TYP. MAX UNIT V VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N6058/2N6059 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic