2N6077

Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・ With TO-66 package ・ ・Low collector-emitter saturation voltage ・High breakdown voltage APPLICATIONS ・For horizontal deflection output stages of TV’s and CRT’s PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6077 2N6078 2N6079 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6077 VCBO Collector-base voltage 2N6078 2N6079 2N6077 VCEO Collector-emitter voltage 2N6078 2N6079 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 275 250 350 300 275 375 6 7 45 150 -65~200 V A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.28 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6077 2N6078 2N6079 CONDITIONS MIN TYP. MAX UNIT 2N6077 Collector-emitter sustaining voltage 275 VCEO(sus) 2N6078 IC=0.1A ;IB=0 250 V 2N6079 350 VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.2 V ICEO Collector cut-off current VCE= Rated VCEO; IB=0 VCE=Rated VCEO; VBE(off)=1.5V TC=125℃ VCB=Rated VCBO; IE=0 VEB=6V; IC=0 2.0 0.1 1.0 0.1 mA ICEX Collector cut-off current mA ICBO IEBO Collector cut-off current mA Emitter cut-off current 1.0 mA hFE DC current gain IC=1.2A ; VCE=1V 12 70 fT Transition frequency IC=0.5A;VCE=10V;f=1MHz 7 MHz JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N6077 2N6078 2N6079 Fig.2 outline dimensions JMnic