Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N6226 2N6227 2N6228
DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For high power audio;stepping motor and other linear applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER 2N6226 VCBO Collector-base voltage 2N6227 2N6228 2N6226 VCEO Collector-emitter voltage 2N6227 2N6228 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 100 120 140 100 120 140 7 6 150 150 -65~200 V A W ℃ ℃ V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.92 UNIT ℃/W
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6226 VCEO Collector-emitter sustaining voltage 2N6227 2N6228 VCEsat VBE ICEO ICBO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N6226 hFE DC current gain 2N6227 2N6228 fT Transition frequency IC=0.5A ; VCE=4V IC=3A ; VCE=2V IC=4A; IB=0.4A IC=3A ; VCE=2V VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VEB=7V; IC=0 IC=0.2A ;IB=0
2N6226 2N6227 2N6228
CONDITIONS
MIN 100 120 140
TYP.
MAX
UNIT
V
1.2 1.8 5.0 1.0 0.1 25 20 15 1 100 80 60
V V mA mA mA
MHz
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
PACKAGE OUTLINE
2N6226 2N6227 2N6228
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
JMnic
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