2N6228

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6226 2N6227 2N6228 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For high power audio;stepping motor and other linear applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6226 VCBO Collector-base voltage 2N6227 2N6228 2N6226 VCEO Collector-emitter voltage 2N6227 2N6228 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 100 120 140 100 120 140 7 6 150 150 -65~200 V A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.92 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6226 VCEO Collector-emitter sustaining voltage 2N6227 2N6228 VCEsat VBE ICEO ICBO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N6226 hFE DC current gain 2N6227 2N6228 fT Transition frequency IC=0.5A ; VCE=4V IC=3A ; VCE=2V IC=4A; IB=0.4A IC=3A ; VCE=2V VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VEB=7V; IC=0 IC=0.2A ;IB=0 2N6226 2N6227 2N6228 CONDITIONS MIN 100 120 140 TYP. MAX UNIT V 1.2 1.8 5.0 1.0 0.1 25 20 15 1 100 80 60 V V mA mA mA MHz JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors PACKAGE OUTLINE 2N6226 2N6227 2N6228 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic