2N6229

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6229 2N6230 2N6231 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For high power audio; disk head positioners and other linear applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6229 VCBO Collector-base voltage 2N6230 2N6231 2N6229 VCEO Collector-emitter voltage 2N6230 2N6231 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 100 120 140 100 120 140 7 10 150 150 -65~200 V A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6229 VCEO Collector-emitter sustaining voltage 2N6230 2N6231 VCEsat VBE ICEO ICBO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N6229 hFE DC current gain 2N6230 2N6231 fT Transition frequency IC=0.5A ; VCE=4V IC=5A ; VCE=2V IC=4A; IB=0.4A IC=5A ; VCE=2V VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VEB=7V; IC=0 IC=0.2A ;IB=0 2N6229 2N6230 2N6231 CONDITIONS MIN 100 120 140 TYP. MAX UNIT V 1.0 2.0 5.0 1.0 0.1 25 20 15 1 100 80 60 V V mA mA mA MHz JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors PACKAGE OUTLINE 2N6229 2N6230 2N6231 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic