2N6248

Product Specification www.jmnic.com Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area ・High gain at high current APPLICATIONS ・General-purpose types of switching and linear-amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6246 2N6247 2N6248 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6246 VCBO Collector-base voltage 2N6247 2N6248 2N6246 VCEO Collector-emitter voltage 2N6247 2N6248 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 70 90 110 60 80 100 5 15 5 125 150 -65~200 V A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.4 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6246 VCEO Collector-emitter sustaining voltage 2N6247 2N6248 2N6246 VCEsat-1 Collector-emitter saturation voltage 2N6247 2N6248 2N6246 VCEsat-2 Collector-emitter saturation voltage 2N6247 2N6248 2N6246 VBE Base-emitter voltage on 2N6247 2N6248 ICEO Collector cut-off current 2N6246 ICEX Collector current cut-off 2N6247 2N6248 Emitter current cut-off 2N6246 VEB=5V; IC=0 2N6247/6248 2N6246 hFE-1 DC current gain 2N6247 2N6248 2N6246 hFE-2 DC current gain 2N6247 2N6248 IC=7A ; VCE=4V IC=6A ; VCE=4V IC=5A ; VCE=4V IC=15A ; VCE=4V IC=15A ; VCE=4V IC=10A ; VCE=4V IC=7A; IB=0.7A IC=6A; IB=0.6A IC=5A; IB=0.5A IC=15A; IB=3A IC=15A; IB=4A IC=0.2A ;IB=0 2N6246 2N6247 2N6248 CONDITIONS MIN 60 80 100 TYP. MAX UNIT V 1.3 V 2.5 V 3.5 IC=10A; IB=2A IC=7A ; VCE=4V IC=6A ; VCE=4V IC=5A ; VCE=4V VCE=1/2Rated VCEO; IB=0 VCE=65V; VBE=-1.5V VCE=55V; VBE=-1.5V TC=150℃ VCE=85V; VBE=-1.5V VCE=70V; VBE=-1.5V TC=150℃ VCE=100V; VBE=-1.5V VCE=90V; VBE=-1.5V TC=150℃ 2.0 1.8 1.8 1.0 0.2 5.0 0.2 5.0 0.2 5.0 5.0 mA 1.0 mA V mA IEBO 20 100 5 JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors PACKAGE OUTLINE 2N6246 2N6247 2N6248 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic