2N6249

2N6249

  • 厂商:

    JMNIC

  • 封装:

  • 描述:

    2N6249 - Silicon NPN Power Transistors - Quanzhou Jinmei Electronic Co.,Ltd.

  • 详情介绍
  • 数据手册
  • 价格&库存
2N6249 数据手册
Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ・Low saturation voltage ・Fast switching capability APPLICATIONS ・For high voltage inverters ,switching regulators and line operated amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6249 2N6250 2N6251 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N6249 VCBO Collector-base voltage 2N6250 2N6251 2N6249 VCEO Collector-emitter voltage 2N6250 2N6251 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 300 375 450 200 275 350 6 10 30 10 175 150 -65~200 V A A A W ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6249 VCEO(SUS) Collector-emitter sustaining voltage 2N6250 2N6251 2N6249 VCE(sat) Collector-emitter saturation voltage 2N6250 2N6251 2N6249 VBE(sat) Base-emitter voltage saturation 2N6250 2N6251 ICEV Collector cut-off current 2N6249 ICEO Collector cut-off current 2N6250 2N6251 IEBO Emitter cut-off current 2N6249 hFE DC current gain 2N6250 2N6251 fT Is/b Transition frequency Second breakdown collector current With base forward biased IC=1A ; VCE=10V VCE=30V,t=1.0s, Nonrepetitive IC=10A ; VCE=3V IC=10A;IB=1.0A IC=10A;IB=1.25 A IC=10A;IB=1.67 A IC=10A;IB=1.0A IC=10A;IB=1.25 A IC=10A;IB=1.67 A IC=200mA ; IB=0 2N6249 2N6250 2N6251 CONDITIONS MIN TYP. MAX 200 275 350 UNIT V 1.5 V 2.25 V VCE=RatedVCEV;VBE=-1.5V TC=125℃ VCE=150V;IB=0 VCE=225V;IB=0 VCE=300V;IB=0 VEB=6V; IC=0 10 8 6 2.5 5.8 5.0 10 mA 5.0 mA 1.0 50 50 50 mA MHz A Switching times tr ts tf Rise time Storage time Fall time For 2N6249 IC=10A; IB1=-IB2=1.0A;VCC=200V For 2N6250 IC=10A;IB1=-IB2=1.25A;VCC=200V For 2N6251 IC=10A;IB1=-IB2=1.67A;VCC=200V 2.0 3.5 1.0 μs μs μs JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N6249 2N6250 2N6251 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) JMnic
2N6249
1. 物料型号: - 型号包括2N6249、2N6250和2N6251。

2. 器件简介: - 这些是硅NPN功率晶体管,具有TO-3封装,高电压、低饱和电压和快速开关能力。

3. 引脚分配: - 引脚1:基极(Base) - 引脚2:集电极,连接到安装底(Collector; connected to mounting base) - 引脚3:发射极(Emitter)

4. 参数特性: - 绝对最大额定值(在25°C下): - VCBO(集电极-基极电压):2N6249为300V,2N6250为375V,2N6251为450V。 - VCEO(集电极-发射极电压):2N6249为200V,2N6250为275V,2N6251为350V。 - VEBO(发射极-基极电压):6V。 - Ic(集电极电流):10A。 - IcM(集电极峰值电流):30A。 - IB(基极电流):10A。 - PT(总功率耗散):175W。 - Tj(结温):150°C。 - Tstg(存储温度):-65至200°C。

5. 功能详解: - 这些晶体管适用于高电压逆变器、开关稳压器和线路操作放大器应用。

6. 应用信息: - 适用于高电压逆变器、开关稳压器和线路操作放大器应用。

7. 封装信息: - 封装类型为TO-3,具体尺寸如图1所示,未标明的公差为±0.10mm。
2N6249 价格&库存

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