2N6253

Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low saturation voltage ・Wide safe operating area ・High dissipation capability APPLICATIONS ・Series and shunt regulators ・High fidelity amplifiers ・Power switching circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6253 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 55 45 5 15 7 115 200 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICEO ICEX IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ;IB=0 IC=3A ;IB=0.3A IC=15A ;IB=5A IC=3A ; VCE=4V VCE=25V; IB=0 VCE=55V; VBE=-1.5V VCE=50V; VBE=-1.5V TC=150℃ VEB=5V; IC=0 IC=3A ; VCE=4V IC=15A ; VCE=4V 20 3 MIN 45 TYP. 2N6253 MAX UNIT V 1.0 4.0 1.7 1.5 2.0 10.0 10 70 V V V mA mA mA JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N6253 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic