2N6257

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6257 DESCRIPTION ・With TO-3 package ・Low collector-emitter saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for audio amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 50 40 5 20 150 150 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6257 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 ICEO ICEV ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltge Collector-emitter saturation voltge Collector cut-off current Collector cut-off current Emitter cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=8A ;IB=0.8A IC=20A ;IB=4A VCE=40V; IB=0 VCE=50V; VBE(off)=1.5V TC=150℃ VCB=50V; IE=0 VEB=5V; IC=0 IC=8A ; VCE=4V IC=20A ; VCE=4V IC=1A;VCE=10V 15 5 0.8 MHz MIN 40 1.5 4.0 1.0 0.1 5.0 0.1 0.1 75 TYP. MAX UNIT V V V mA mA mA mA JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N6257 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic