2N6258

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6258 DESCRIPTION ・With TO-3 package ・Low collector-emitter saturation voltage APPLICATIONS ・Designed for audio amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 80 5 30 7.5 250 150 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6258 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICEO ICEV ICBO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltge Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=7.5A ;IB=0.75A IC=7.5A ;IB=0.75A VCE=40V; IB=0 VCE=100V; VBE(off)=1.5V TC=150℃ VCB=100V; IE=0 VEB=5V; IC=0 IC=15A ; VCE=2V IC=1A;VCE=10V 20 0.8 MHz MIN 80 1.0 1.3 1.0 0.1 5.0 0.1 0.1 TYP. MAX UNIT V V V mA mA mA mA JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N6258 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3