2N6259

Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High power dissipation APPLICATIONS ・Designed for high power audio ,disk head positioners,linear amplifiers,switching regulators solenoid drivers,and DC-DC converters or inverters PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6259 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 170 150 7 16 30 4 15 150 200 -65~200 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6259 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICEO ICEX ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltge Collector-emitter saturation voltge Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ;IB=0 IC=8A ;IB=0.8A IC=16A ;IB=3.2A IC=8A ; VCE=2V VCE=130V; IB=0 VCE=150V; VBE(off)=1.5V VCB=150V; IE=0 VEB=7V; IC=0 IC=8A ; VCE=2V IC=16A ; VCE=4V 15 10 MIN 150 1.5 2.5 2.0 10 2.0 2.0 5.0 60 TYP. MAX UNIT V V V V mA mA mA mA JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N6259 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic