2N6297

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6296 2N6297 DESCRIPTION ・With TO-66 package ・DARLINGTON ・Complement to type 2N6294/6295 APPLICATIONS ・For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER 2N6296 Collector-base voltage 2N6297 2N6296 VCEO VEBO IC ICM IB PT Tj Tstg Collector-emitter voltage 2N6298 Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 80 5 4 8 80 50 150 -65~200 V A A mA W ℃ ℃ Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 3.5 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6296 IC=50mA ; IB=0 2N6297 IC=2A ;IB=8mA IC=4A ;IB=40mA IC=4A ;IB=40mA IC=2A ; VCE=3V VCE=RatedVCE;VBE(off)=1.5V TC=150℃ VCE=1/2Rated VCEO; IB=0 VEB=5V; IC=0 IC=2A ; VCE=3V IC=4A ; VCE=3V IC=1.5A ; VCE=3V;f=1.0MHz IE=0 ; VCB=10V;f=0.1MHz CONDITIONS 2N6296 2N6297 MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 80 2.0 3.0 4.0 2.8 0.5 5.0 0.5 2.0 750 100 4.0 200 MHz pF 18000 V V V V mA mA mA VCEsat-1 VCEsat-2 VBEsat VBE ICEX ICEO IEBO hFE-1 hFE-2 fT COB Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors PACKAGE OUTLINE 2N6296 2N6297 Fig.2 Outline dimensions JMnic