2N6341

JMnic Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・Fast switching times ・Low collector saturation voltage ・Complement to type 2N6436~38 APPLICATIONS ・For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6338 2N6339 2N6340 2N6341 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6338 2N6339 VCBO Collector-base voltage 2N6340 2N6341 2N6338 2N6339 VCEO Collector-emitter voltage 2N6340 2N6341 VEBO IC ICM IBC PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 140 150 6 25 50 10 200 200 -65~200 V A A A W ℃ ℃ Open emitter 160 180 100 120 V CONDITIONS VALUE 120 140 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6338 2N6339 2N6338 2N6339 2N6340 2N6341 CONDITIONS MIN 100 120 TYP. MAX UNIT V(SUS)CEO Collector-emitter sustaining voltage IC=50mA ;IB=0 2N6340 2N6341 140 150 IC=10A; IB=1.0A IC=25A; IB=2.5A IC=10A; IB=1.0A IC=25A; IB=2.5A IC=10A ; VCE=2V VCE=Rated VCEO; VEB=-1.5V TC=150℃ VCB=Rated VCB; IE=0 2N6338 2N6339 VCE= 50V,IB=0 VCE= 60V,IB=0 50 2N6340 2N6341 VCE= 70V,IB=0 VCE= 75V,IB=0 VEB=6V; IC=0 IC=0.5A ; VCE=2V IC=10A ; VCE=2V IC=25A ; VCE=2V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=10V;f=10MHz 40 50 30 12 300 120 100 1.0 1.8 1.8 2.5 1.8 10 1.0 10 V VCEsat-1 VCEsat-2 VBE sat-1 VBE sat-2 VBE ICEX ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current V V V V V μA mA μA ICEO Collector cut-off current μA IEBO hFE-1 hFE-2 hFE-3 COB fT Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency μA pF MHz 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6338 2N6339 2N6340 2N6341 Fig.2 outline dimensions 3