2N6386

JMnic Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type 2N6666/6667/6668 ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・Designed for general-purpose amplifier and low speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6386 2N6387 2N6388 Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER 2N6386 VCBO Collector-base voltage 2N6387 2N6388 2N6386 VCEO Collector-emitter voltage 2N6387 2N6388 VEBO IC Emitter-base voltage 2N6386 Collector current-DC 2N6387/6388 ICM IB PC Tj Tstg Collector current-Pulse Base current-DC Collector power dissipation Junction temperature Storage temperature TC=25℃ 10 15 0.25 65 150 -65~150 A A W ℃ ℃ Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 8 A V V V UNIT JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6386 VCEO(SUS) Collector-emitter sustaining voltage 2N6387 2N6388 Collector-emitter saturation voltage 2N6386 2N6387/6388 2N6386 2N6387/6388 2N6386 2N6387/6388 2N6386 2N6387/6388 2N6386 ICBO Collector cut-off current 2N6387 2N6388 2N6386 ICEO Collector cut-off current 2N6387 2N6388 IEBO Emitter cut-off current 2N6386 hFE-1 DC current gain 2N6387/6388 2N6386 hFE-2 DC current gain 2N6387/6388 Cob Output capacitance IC=10A ; VCE=3V IC=5A ; VCE=3V IC=8A ; VCE=3V IC=3A ,IB=6mA IC=0.2A, IB=0 2N6386 2N6387 2N6388 CONDITIONS MIN 40 60 80 TYP. MAX UNIT V VCEsat-1 2.0 IC=5A ,IB=10mA IC=8A ,IB=80mA 3.0 IC=10A ,IB=100mA IC=3A ; VCE=3V 2.8 IC=5A ; VCE=3V IC=8A ; VCE=3V 4.5 IC=10A ; VCE=3V VCB=40V, VBE=-1.5V TC=125℃ VCB=60V, VBE=-1.5V TC=125℃ VCB=80V, VBE=-1.5V TC=125℃ VCE=40V, IB=0 VCE=60V, IB=0 VCE=80V, IB=0 VEB=5V; IC=0 IC=3A ; VCE=3V 1000 20000 5.0 1.0 0.3 3.0 0.3 3.0 0.3 3.0 V VCEsat-2 Collector-emitter saturation voltage V VBE-1 Base-emitter on voltage V VBE-2 Base-emitter on voltage V mA mA mA 100 IE=0 ; VCB=10V,f=0.1MHz 200 pF THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.92 UNIT ℃/W 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6386 2N6387 2N6388 Fig.2 Outline dimensions 3