2N6388

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6388 DESCRIPTION ・With TO-220 package ・High current capability ・Integrated antiparallel collector-emitter diode APPLICATIONS ・It is intended for use in low and medium frequency power applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 80 80 5 10 15 250 65 150 -65~150 UNIT V V V A A mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.92 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6388 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE-1 VBE-2 ICEO ICEV IEBO hFE-1 hFE-2 VF Ccbo Is/b PARAMETER Collector-emitter sustioning voltage Collector-emitter saturation voltge Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Forward voltage Collector-base capacitance Second breakdown collector current With base forward biased CONDITIONS IC=0.2A ;IB=0 IC=5A IB=10mA IC=10A IB=100mA IC=5A ; VCE=3V IC=10A ; VCE=3V VCE=80V; IB=0 VCE=80V; VBE(off)=1.5V VCE=80V ;TC=150℃ VEB=5V; IC=0 IC=5A ; VCE=3V IC=10A ; VCE=3V IF=10A IE=0;VCB=10V;f=1MHz VCE=25V,t=1.0s, Nonrepetitive 2.6 1000 100 4 200 V pF A MIN 80 2 3 2.8 4.5 1 0.3 3 5.0 2000 TYP. MAX UNIT V V V V V mA mA mA JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N6388 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) JMnic