2N6477

JMnic Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・High voltage ratings ・Excellent safe operating area APPLICATIONS ・Series and shunt regulators ・High-fidelity amplifiers ・Power switching circuits ・Solenoid drivers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6477 2N6478 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N6477 VCBO Collector-base voltage 2N6478 2N6477 VCEO Collector-emitter voltage 2N6478 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 140 5 2.5 4 1 50 150 -65~150 V A A A W ℃ ℃ Open emitter 160 120 V CONDITIONS VALUE 140 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 UNIT ℃/W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6477 VCEO(SUS) Collector-emitter sustaining voltage 2N6478 VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage 2N6477 ICEX Collector cut-off current VBE=-1.5V 2N6478 2N6477 ICEO Collector cut-off current 2N6478 IEBO hFE-1 hFE-2 COB fT Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency VCE=100V;IB=0 VEB=5V; IC=0 IC=1.0A ; VCE=4V IC=2.5A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=4V IC=1.0A;IB=0.1A IC=2.5A;IB=0.5A IC=1.0A ; VCE=4V IC=2.5A ; VCE=4V VCE=130V VCE=120V; TC=150℃ VCE=150V VCE=140V; TC=150℃ VCE=80V;IB=0 IC=0.1A ;IB=0 CONDITIONS 2N6477 2N6478 MIN 120 TYP. MAX UNIT V 140 1.0 2.0 1.8 3.0 2.0 10 mA 2.0 10 V V V V 2.0 mA 2.0 25 5 250 0.2 150 mA pF MHz 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6477 2N6478 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3