2N6489

JMnic Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Excellent safe operating area ・Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS ・Power amplifier and medium speed switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N6489 2N6490 2N6491 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N6489 VCBO Collector-base voltage 2N6490 2N6491 2N6489 VCEO Collector-emitter voltage 2N6490 2N6491 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -50 -70 -90 -40 -60 -80 -5 -15 -5 75 150 -65~150 V A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT ℃/W JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6489 VCEO(SUS) Collector-emitter sustaining voltage 2N6490 2N6491 VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage 2N6489 ICEX Collector cut-off current VBE=-1.5V 2N6490 2N6491 2N6489 ICEO Collector cut-off current 2N6490 2N6491 IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain IC=-5A;IB=-0.5A IC=-15A;IB=-5A IC=-5A ; VCE=-4V IC=-15A ; VCE=-4V VCE=-45V; VCE=-40V;TC=150℃ VCE=-65V; VCE=-60V;TC=150℃ VCE=-85V; VCE=-80V;TC=150℃ VCE=-20V;IB=0 VCE=-30V;IB=0 VCE=-40V;IB=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=-15A ; VCE=-4V IC=-0.2A ;IB=0 2N6489 2N6490 2N6491 CONDITIONS MIN -40 -60 -80 TYP. MAX UNIT V -1.3 -3.5 -1.3 -3.5 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 V V V V mA -1.0 mA -1.0 20 5 150 mA 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6489 2N6490 2N6491 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3