2N6534

JMnic Product Specification Silicon NPN Power Transistors 2N6534 DESCRIPTION ・With TO-66 package ・DARLINGTON APPLICATIONS ・Power switching ・Hammer drivers ・Series and shunt regulators ・Audio amplifiers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 80 80 5 8 15 0.25 36 150 -65~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N6534 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 80 V VCEsat-1 Collector-emitter saturation voltage IC=5A ;IB=10mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=80m A 3.0 V VBE-1 Base -emitter on voltage IC=5A ; VCE=3V 2.8 V VBE-2 Base -emitter on voltage IC=8A ; VCE=3V VCE=80V; VBE=-1.5V TC=125℃ VCE=80V; IB=0 4.5 0.5 5.0 1.0 V ICEV Collector cut-off current mA ICEO Collector cut-off current mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE-1 DC current gain IC=5A ; VCE=3V 1000 10000 hFE-2 DC current gain IC=8A ; VCE=3V 100 5000 VF Diode forward voltage IF=8A 5.0 V 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6534 Fig.2 Outline dimensions 3