2N6543

Power Transistors www.jmnic.com 2N6543 Silicon NPN Transistors Features Intended for high voltage,fast switching applications With TO-3 package Absolute Maximum Ratings Tc=25 SYMBOL VCBO VCEO VEBO ICP IC PC Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature RATING 850 400 9.0 16 5.0 100 200 -65~200 UNIT V V V A A W TO-3 Electrical Characteristics Tc=25 SYMBOL ICBO IEBO ICEO VCBO V(BR)CEO VEBO VCEsat-1 VCEsat-2 VCEsat-3 VCEsat-4 hFE-1 hFE-2 hFE-3 hFE-4 VBE(sat)1 VBE(sat)2 VBE(sat)3 fT tf ts PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltages Collector-emitter saturation voltages Collector-emitter saturation voltages Collector-emitter saturation voltages Forward current transfer ratio Forward current transfer ratio Forward current transfer ratio Forward current transfer ratio Base-emitter saturation voltages Base-emitter saturation voltages Base-emitter saturation voltages Transition frequency at f = 1MHz Fall time Tum-off storage time IC=0.3A,VCE=10V 6.0 24 MHz IC =5A; IB =1A 1.6 V IC=2.5A,VCE=3V IC=5A,VCE=3V 12 7.0 60 35 IC =5A; IB =1A IC =8A; IB =2A 1.5 5.0 V V IC=100mA,IB=0 400 V CONDITIONS VCB=850V,VBE=0 VEB =9V; IC=0 MIN MAX 0.5 1.0 UNIT mA mA JMnic