2N6547

Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ・Switching regulators ・PWM inverters and motor controls ・Solenoid and relay drivers ・Deflection circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6547 Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IE IEM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Emitter current Emitter current-peak Total power dissipation Junction temperature Storage temperature Tc=25℃ CONDITIONS Open emitter Open base Open collector VALUE 850 400 9 15 30 10 25 50 175 150 -65~150 UNIT V V V A A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat-1 VCEsat-2 VBEsat ICEV IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=100mA ; IB=0 IC=10A IB=2A IC=15A IB=3A IC=10A IB=2A VCEV=850V VBE(off)=1.5V TC=100℃ VEB=9V; IC=0 IC=5A ; VCE=2V IC=10A ; VCE=2V IC=0.5A ; VCE=10V 12 6 6 MIN 400 TYP. 2N6547 MAX UNIT V 1.5 5.0 1.6 1.0 4.0 1.0 60 30 35 V V V mA mA MHz Switching times td tr ts tf Delay time Rise time Storage time Fall time IC=10A; IB1=-IB2=2.0A VCC=250V; tp=0.1ms; Duty Cycle≤2.0% 0.05 1.0 4.0 0.8 μs μs μs μs JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N6547 Fig.2 Outline dimensions JMnic