2N6569

JMnic Product Specification Silicon NPN Power Transistors 2N6569 DESCRIPTION ・With TO-3 package ・Complement to type 2N6594 ・Wide area of safe operation APPLICATIONS ・Designed for low voltage amplifier power switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB IE IEM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Emitter current Emitter current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 45 40 5 12 24 5 17 34 100 200 -65~200 UNIT V V V A A A A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEO ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=4A; IB=0.4A IC=12A; IB=2.4A IC=4A; IB=0.4A VCE=40V; IB=0 VCB=45V; IE=0 VEB=5V; IC=0 IC=4A ; VCE=3V IC=12A ; VCE=4V IC=1.0A ; VCE=4V;f=0.5MHz 15 5 1.5 MIN 40 TYP. 2N6569 MAX UNIT V 1.5 4.0 2.0 1.0 1.0 5.0 200 100 20 V V V mA mA mA MHz Switching times td tr tstg tf Delay time Rise time Storage time Fall time IC=2A; IB1=-IB2=0.2A VCC=30V; tp=25μs; Duty Cycle≤2.0% 0.4 1.5 5.0 1.5 μs μs μs μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT ℃/W 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6569 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3