2N6671

JMnic Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low saturation voltage ・Fast switching speed ・High voltage ratings APPLICATIONS ・Off-line power supplies ・High-voltage inverters ・Switching regulators PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N6671 2N6672 2N6673 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6671 VCBO Collector-base voltage 2N6672 2N6673 2N6671 VCEO Collector-emitter voltage 2N6672 2N6673 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 450 550 650 300 350 400 8 8 10 4 150 200 -65~200 V A A A W ℃ ℃ V V UNIT JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6671 VCEO(SUS) Collector-emitter sustaining voltage 2N6672 2N6673 VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2N6671 ICEV Collector cut-off current 2N6672 2N6673 IEBO hFE COB fT Emitter cut-off current DC current gain Output capacitance Transition frequency IC=5A; IB=1A IC=8A ;IB=4A IC=5A; IB=1A IC=0.2A ;IB=0 CONDITIONS 2N6671 2N6672 2N6673 MIN 300 350 400 TYP. MAX UNIT V 1.0 2.0 1.6 V V V VCE=450V; VBE(off)=-1.5V VCE=550V; VBE(off)=-1.5V VCE=650V; VBE(off)=-1.5V VEB=8V; IC=0 IC=5A ; VCE=3V IE=0 ; VCB=10V;f=0.1MHz IC=0.2A ; VCE=10V 15 10 2.0 40 300 60 pF MHz mA 0.1 mA THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6671 2N6672 2N6673 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3