2N6675

JMnic Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage,high speed APPLICATIONS ・Switching regulators ・Inverters ・Solenoid and relay drivers ・Deflection circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6674 2N6675 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6674 VCBO Collector-base voltage 2N6675 2N6674 VCEO Collector-emitter voltage 2N6675 VEBO IC IB Emitter-base voltage Collector current Base current Ta=25℃ PT Total Power Dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 175 200 -65~200 ℃ ℃ Open collector Open base 400 7 15 5 6 W V A A Open emitter 650 300 V CONDITIONS VALUE 450 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT ℃/W JMnic Product Specification Silicon NPN Power Transistors 2N6674 2N6675 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6674 VCEO(SUS) Collector-emitter sustaining voltage 2N6675 IC=0.2A ;IB=0 300 V 400 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=2A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=5A 5.0 V VBEsat Base-emitter saturation voltage IC=10A; IB=2A 1.5 V 2N6674 ICBO Collector cut-off current 2N6675 VCB=450V; IE=0 0.1 VCB=650V; IE=0 mA IEBO hFE-1 Emitter cut-off current VEB=7V; IC=0 IC=1A ; VCE=3V 15 1.0 mA DC current gain 40 hFE-2 DC current gain IC=10A ; VCE=2V 8 20 fT Trainsistion frequency IC=0.5A ; VCE=10V;f=1MHz 15 MHz 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6674 2N6675 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3