2N6833

JMnic Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Hihg voltage,high speed APPLICATIONS ・Switching regulators ・Inverters ・Solenoid and relay drivers ・Motor controls ・Deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6833 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 850 450 6 5 10 4 8 80 150 -65~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.56 UNIT ℃/W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE sat ICEV IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=1.5A;IB=0.15A IC=3A;IB=0.4A TC=100℃ IC=3A;IB=0.4A TC=100℃ VCE=850V;VBE=-1.5V TC=105℃ VBE=6V; IC=0 IC=3A ; VCE=5V IC=5A ; VCE=5V IE=0 ; f=1kHz,VCB=10V IC=0.25A ; VCE=10V;f=10MHz 7.5 5 20 15 MIN 450 TYP. 2N6833 MAX UNIT V 1.0 2.5 2.5 1.5 1.5 0.25 1.5 1.0 30 V V V mA mA 200 75 pF MHz 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6833 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3