2N6931

JMnic Product Specification Silicon NPN Power Transistors 2N6931 2N6932 DESCRIPTION ・With TO-3PN package ・High voltage ,high speed APPLICATIONS ・Off-line power supplies ・High-voltage inverters ・Switching regulators PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2N6931 VCBO Collector-base voltage 2N6932 2N6931 VCEO Collector-emitter voltage 2N6932 VEBO IC ICM IB IBM IE IEM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Emitter current Emitter current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 400 8 10 15 5 7 15 22 150 150 -65~150 V A A A A A A W ℃ ℃ Open emitter 650 300 V CONDITIONS VALUE 450 V UNIT JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6931 IC=0.2A ;L=25mH 2N6932 V(BR)EBO VCEsat VBEsat Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2N6931 ICEV Collector cut-off current 2N6932 IEBO hFE COB Emitter cut-off current DC current gain Collector output capacitance IE=50mA ;IC=0 IC=10A ;IB=2A TC=100℃ IC=10A ;IB=2A TC=100℃ VCE=450V; VBE=-1.5V TC=100℃ VCE=650V; VBE=-1.5V TC=100℃ VEB=8V; IC=0 IC=10A ; VCE=3V f=1MHz;VCB=10V CONDITIONS 2N6931 2N6932 MIN 300 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 400 8 1.0 2.0 1.5 1.5 0.1 1.0 mA 0.1 1.0 2 8 80 35 300 pF mA V V V Switching times resistive load td tr tstg tf Delay time Rise time Storage time Fall time IC=10A; IB1=-IB2=2A VCC=300V, RC=30Ω VBB=-5V;tp=30μs 0.1 0.7 2.5 0.5 μs μs μs μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.83 UNIT ℃/W 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6931 2N6932 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3