2SA1051

JMnic Product Specification Silicon PNP Power Transistors 2SA1051 DESCRIPTION ・With TO-3 package ・High transition frequency ・Excellent safe operating area APPLICATIONS ・For audio and general purpose power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -15 -1.5 150 175 -55~200 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1051 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -150 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V VBE Base-emitter on voltage IC=-8A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-140V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain IC=-8A ; VCE=-5V 35 fT Transition frequency IC=-1A ; VCE=-10V 60 MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1051 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3