2SA1061

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1061 DESCRIPTION ・With TO-3PN package ・Complement to type 2SC2485 ・High collector power dissipation APPLICATIONS ・High power audio frequency amplifier PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -5 -6 -10 70 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ;IB=0 IC=-4A ;IB=-0.4A IC=-4A;VCE=-5V VCB=-100V; IE=0 VEB=-3V; IC=0 IC=-0.2A ; VCE=-5V IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-0.5A ; VCE=-5V 20 40 20 20 MIN -100 TYP. 2SA1061 MAX UNIT V -2.0 -1.8 -50 -50 V V μA μA 200 MHz hFE-2 Classifications R 40-80 Q 60-120 P 100-200 JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1061 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic