2SA1072

JMnic Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION ・With TO-3 package ・Complement to type 2SC2522/2523 ・Excellent safe operating area ・Fast switching speed APPLICATIONS ・High frequency power amplifier ・Audio power amplifiers ・Switching regulators ・DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2SA1072 VCBO Collector-base voltage 2SA1073 2SA1072 VCEO Collector-emitter voltage 2SA1073 VEBO IC PC Tj Tstg Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -160 -7 -12 120 150 -65~150 V A W ℃ ℃ Open emitter -160 -120 V CONDITIONS VALUE -120 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA1072 IC=-1mA ;RBE=∞ 2SA1073 2SA1072 IC=-50μA ;IE=0 2SA1073 V(BR)EBO VCEsat VBE Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage 2SA1072 2SA1073 2SA1072 2SA1073 IEBO hFE-1 hFE-2 COB fT Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency IE=-50μA ;IC=0 IC=-5A ;IB=-0.5A IC=-5A ; VCE=-5V VCB=-120V; IE=0 CONDITIONS 2SA1072 2SA1073 MIN -120 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -160 -120 V -160 -7 -0.9 -1.25 -1.8 -1.7 V V V V(BR)CBO Collector-base breakdown voltage ICBO Collector cut-off current -50 VCB=-160V; IE=0 VCE=-120V; RBE=∞ -1 VCE=-160V; RBE=∞ VEB=-7V; IC=0 IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-10V;f=10MHz 60 40 300 60 -50 200 μA ICEO Collector cut-off current mA μA pF MHz Switching times tr tstg tf Rise time Storage time Fall time IC=-7.5A IB1=-IB2=-0.75A;RL=4Ω 0.15 0.50 0.11 μs μs μs 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1072 2SA1073 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3