2SA1075

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1075 2SA1076 DESCRIPTION ・With MT-200 package ・Complement to type 2SC2525,2SC2526 ・Fast switching speed ・Excellent safe operating area APPLICATIONS ・High frequency power amplifiers ・Audio power amplifiers ・Switching regulators ・DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SA1075 VCBO Collector-base voltage 2SA1076 2SA1075 VCEO Collector-emitter voltage 2SA1076 VEBO IC PC Tj Tstg Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -160 -7 -12 120 150 -65~150 V V A W ℃ ℃ Open emitter -160 -120 V V CONDITIONS VALUE -120 UNIT V JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter breakdown voltage 2SA1075 IC=-1mA ;RBE=∞ 2SA1076 2SA1075 IC=-50μA; IE=0 2SA1076 IE=-50μA; IC=0 IC=-5A;IB=-0.5A IC=-5A;VCE=-5V 2SA1075 ICBO Collector cut-off current 2SA1076 2SA1075 ICEO Collector cut-off current 2SA1076 IEBO hFE-1 hFE-2 Cob fT Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency VCE=-160V; IB=0 VEB=-7V; IC=0 IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IE=0 ; VCB=-10V IC=-1A ; VCE=-10V VCB=-160V; IE=0 VCE=-120V; IB=0 VCB=-120V; IE=0 CONDITIONS 2SA1075 2SA1076 MIN -120 TYP. MAX UNIT V(BR)CEO V -160 -120 V -160 -7 -1.8 -1.7 V V V V(BR)CBO Collector-base breakdown voltage V(BR)EBO VCEsat VBE Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage -50 μA -1 mA -50 60 40 300 45 200 μA pF MHz Switching times tr ts tf Rise time Storage time Fall time IC=- 7.5A;RL=4Ω IB1=- IB2=-0.75A -0.15 -0.50 -0.11 μs μs μs JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1075 2SA1076 Fig.2 outline dimensions JMnic