2SA1079

JMnic Product Specification Silicon PNP Power Transistors 2SA1079 DESCRIPTION ・With TO-220 package ・High transition frequency ・Excellent safe operating area APPLICATIONS ・High-frequency power amplifier ・Audio power amplifiers and drivers PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -2 25 150 -65~150 UNIT V V V A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-1mA ,RBE=∞ IC=-1μA ,IE=0 IE=-1μA ,IC=0 IC=-0.7A; IB=-70mA IC=-0.7A ; VCE=-5V VCB=-160V; IE=0 VCE=-160V; IB=0 VEB=-5V; IC=0 IC=-0.3A ; VCE=-5V IC=-0.7A ; VCE=-5V IC=-0.5A ; VCE=-10V;f=10MHz IE=0 ; VCB=-20V;f=1MHz 100 50 120 100 MIN -160 -160 -5 -0.45 -0.8 TYP. 2SA1079 MAX UNIT V V V -1.0 -1.7 -1 -100 -1 350 V V μA μA μA MHz pF 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1079 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3