2SA1095

JMnic Product Specification Silicon PNP Power Transistors 2SA1095 DESCRIPTION ・With MT-200 package ・Complement to type 2SC2565 ・High breakdown voltage ・High transition frequency APPLICATIONS ・Power amplifier applications ・Recommended for 100W high-fidelity audio frequency amplifer output stage PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collectorl power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -15 15 150 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-100mA; IB=0 IE=-10mA; IC=0 IC=-5 A;IB=-0.5 A IC=-5A ; VCE=-5V VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-10V IE=0; VCB=-10V;f=1MHz 55 40 60 350 MIN -160 -5 2SA1095 TYP. MAX UNIT V V -2.0 -2.0 -50 -50 240 V V μA μA MHz pF hFE classifications R 55-110 O 80-160 Y 120-240 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1095 Fig.2 Outline dimensions 3