2SA1096

JMnic Product Specification Silicon PNP Power Transistors 2SA1096 2SA1096A DESCRIPTION ・With TO-126 package ・Complement to type 2SC2497/2SC2497A APPLICATIONS ・For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SA1096 VCEO Collector- emitter voltage 2SA1096A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Open collector Open base -60 -5 -2 -3 1.2*1 PD Total power dissipation TC=25℃ 5*2 Tj Tstg Junction temperature Storage temperature 150 -55～+150 ℃ ℃ W V A A CONDITIONS Open emitter VALUE UNIT V -70 -50 V Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA1096 V(BR)CEO Collector-emitter breakdown voltage 2SA1096A V(BR)CBO VCEsat VBEsat ICEO ICBO IEBO hFE COB fT Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency IC=-1mA ;IE=0 IC=-1.5A ;IB=-0.15A IC=-1.5A ;IB=-0.15A VCE=-10V; IB=0 VCB=-20V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IE=0 ; VCB=-20V,f=1MHz IC=-2mA ; IB=0 CONDITIONS 2SA1096 2SA1096A MIN -50 TYP. MAX UNIT V -60 -70 -1.0 -1.5 -1 -100 -10 80 55 150 220 pF MHz V V V μA μA μA IE=-0.5A ; VCB=-5V,f=200MHz hFE Classifications Q 80-160 R 120-220 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1096 2SA1096A Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1096 2SA1096A 4 JMnic Product Specification Silicon PNP Power Transistors 2SA1096 2SA1096A 5