2SA1116

JMnic Product Specification Silicon PNP Power Transistors 2SA1116 DESCRIPTION ・With TO-3 package ・Complement to type 2SC2607 APPLICATIONS ・For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -200 -200 -6 -15 -5 150 150 -65~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1116 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -200 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V ICBO Collector cut-off current VCB=-200V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-5A ; VCE=-4V 30 fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz Switching times resistive load tr Rise time IC=-5.0A IB1=-IB2=-0.5A RL=12Ω;VCC=-60V 0.3 μs ts Storage time 0.9 μs tf Fall time 0.2 μs 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1116 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3