0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2SA1142

2SA1142

  • 厂商:

    JMNIC

  • 封装:

  • 描述:

    2SA1142 - Silicon PNP Power Transistors - Quanzhou Jinmei Electronic Co.,Ltd.

  • 数据手册
  • 价格&库存
2SA1142 数据手册
JMnic Product Specification Silicon PNP Power Transistors 2SA1142 DESCRIPTION ・With TO-126 package ・Complement to type 2SC2682 APPLICATIONS ・Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-126) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 8 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -180 -180 -5 -0.1 1.2 W UNIT V V V A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1142 TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-50mA; IB=-5mA -0.16 -0.5 V VBEsat Base-emitter saturation voltage IC=-50mA; IB=-5mA -0.8 -1.5 V μA μA ICBO Collector cut-off current VCB=-180V; IE=0 -1 IEBO Emitter cut-off current VEB=-3V; IC=0 -1 hFE-1 DC current gain IC=-1mA ; VCE=-5V 90 200 hFE-2 DC current gain IC=-10mA ; VCE=-5V 100 200 320 fT Transition frequency IC=-20mA ; VCE=-10V 180 MHz Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 4.5 pF hFE-2 Classifications O 100-200 Y 160-320 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1142 Fig.2 Outline dimensions 3
2SA1142 价格&库存

很抱歉,暂时无法提供与“2SA1142”相匹配的价格&库存,您可以联系我们找货

免费人工找货