JMnic
Product Specification
Silicon PNP Power Transistors
2SA1142
DESCRIPTION ・With TO-126 package ・Complement to type 2SC2682 APPLICATIONS ・Audio frequency power amplifier; high frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-126) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 8 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -180 -180 -5 -0.1 1.2 W UNIT V V V A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SA1142
TYP.
MAX
UNIT
VCEsat
Collector-emitter saturation voltage
IC=-50mA; IB=-5mA
-0.16
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-50mA; IB=-5mA
-0.8
-1.5
V μA μA
ICBO
Collector cut-off current
VCB=-180V; IE=0
-1
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-1
hFE-1
DC current gain
IC=-1mA ; VCE=-5V
90
200
hFE-2
DC current gain
IC=-10mA ; VCE=-5V
100
200
320
fT
Transition frequency
IC=-20mA ; VCE=-10V
180
MHz
Cob
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
4.5
pF
hFE-2 Classifications O 100-200 Y 160-320
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1142
Fig.2 Outline dimensions
3
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