2SA1146

JMnic Product Specification Silicon PNP Power Transistors 2SA1146 DESCRIPTION ・With TO-3P(I) package ・High power dissipations APPLICATIONS ・For audio and general purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -140 -140 -5 -10 -2 100 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors 2SA1146 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 -140 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=-1mA ,IC=0 IC=-5A; IB=-0.5A -5 V Collector-emitter saturation voltage -2.0 V μA μA ICBO Collector cut-off current VCB=-140V; IE=0 -10 IEBO Emitter cut-off current VEB=-5V; IC=0 -10 hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain IC=-4A ; VCE=-5V 35 fT Transition frequency IC=-0.5A ; VCE=-10V 70 MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1146 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3