JMnic
Product Specification
Silicon PNP Power Transistors
2SA1147
DESCRIPTION ・With TO-3 package ・High power dissipations ・Complement to type 2SC2707 APPLICATIONS ・For power switching amplifier and general purpose applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -180 -180 -6 -15 -5 150 150 -65~150 UNIT V V V A A W ℃ ℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SA1147
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
-180
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-180
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-10A; IB=-1A
-3.0
V
ICBO
Collector cut-off current
VCB=-180V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-0.1
mA
hFE
DC current gain
IC=-5A ; VCE=-4V
30
fT
Transition frequency
IC=-0.5A ; VCE=-12V
60
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1147
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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