2SA1184

JMnic Product Specification Silicon PNP Power Transistors 2SA1184 DESCRIPTION ・With TO-126 package ・High breakdown voltage APPLICATIONS ・Audio frequency power amplifier ・High frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 15 150 -55～+150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -5 -1 -0.1 1.5 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1184 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-10μA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA -1.0 V VBE Base-emitter on voltage IC=-500mA ; VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1 μA hFE DC current gain IC=-100mA ; VCE=-5V 80 240 fT Transition frequency IC=-0.1A ; VCE=5V 120 MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1184 Fig.2 Outline dimensions 3