2SA1216

JMnic Product Specification Silicon PNP Power Transistors 2SA1216 DESCRIPTION ・With MT-200 package ・Complement to type 2SC2922 APPLICATIONS ・Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -180 -180 -5 -17 -5 200 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-25mA ; IB=0 IC=-8A ;IB=-0.8A VCB=-180V; IE=0 VEB=-5V; IC=0 IC=-8A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=-2A ; VCE=-12V 30 500 40 MIN -180 TYP. 2SA1216 MAX UNIT V -2.0 -100 -100 V μA μA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-10A;RL=Ω IB1=-IB2=-1A VCC=-40V 0.30 0.70 0.20 μs μs μs hFE classifications O 30-60 Y 50-100 P 70-140 G 90-180 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1216 Fig.2 outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1216 4