2SA1227

JMnic Product Specification Silicon PNP Power Transistors 2SA1227 2SA1227A DESCRIPTION ・With TO-3PFa package ・Complement to type 2SC2987/2987A ・High power dissipation APPLICATIONS ・For use in audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SA1227 VCBO Collector-base voltage 2SA1227A 2SA1227 VCEO Collector-emitter voltage 2SA1227A VEBO IC ICM PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -160 -5 -12 -20 120 150 -55~150 V A A W ℃ ℃ Open emitter -160 -140 V CONDITIONS VALUE -140 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA1227 2SA1227A MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -0.8 -1.5 V VBEsat ICBO Base-emitter saturation voltage IC=-5A ;IB=-0.5A VCB=-140V; IE=0 -1.5 -2.0 V μA μA Collector cut-off current -50 IEBO Emitter cut-off current VEB=-3V; IC=0 -50 hFE-1 DC current gain IC=-2A ; VCE=-5V 60 320 hFE -2 DC current gain IC=-5A ; VCE=-5V 40 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 280 pF fT Transition frequency IC=-1A ; VCE=-5V 60 MHz hFE-1 classifications R 60-120 Q 100-200 P 160-320 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1227 2SA1227A Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3