2SA1261

JMnic Product Specification Silicon PNP Power Transistors 2SA1261 DESCRIPTION ・With TO-220 package ・High switching speed ・Low collector saturation voltage ・Complement to type 2SC3157 APPLICATIONS ・For high voltage ,high speed and power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Ta=25℃ PT Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 60 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -10 -20 -3.5 1.5 W UNIT V V V A A A JMnic Product Specification Silicon PNP Power Transistors 2SA1261 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=-5A ;IB1=-0.5A;L=1mH IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-100V; IE=0 VCE=-100V; VBE=-1.5V Ta=125℃ VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-5A ; VCE=-5V 40 40 20 MIN -100 -0.6 -1.5 -0.01 -0.01 -1.0 -0.01 200 200 TYP. MAX UNIT V V V mA mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A;IB1=-IB2=-0.5A , RL=10Ω;VCC=-50V 0.5 1.5 0.5 μs μs μs hFE-2 classifications M 40-80 L 60-120 K 100-200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1261 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3