2SA1262

JMnic Product Specification Silicon PNP Power Transistors 2SA1262 DESCRIPTION ・With TO-220 package ・Complement to type 2SC3179 APPLICATIONS ・Audio and general purpose PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -6 -4 -1 30 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT Cob PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-25mA ,IB=0 IC=-2A; IB=-0.2A VCB=-60V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-4V IE=0.2A ; VCE=-12V IE=0 ; VCB=-10V ;f=1MHz 40 MIN -60 2SA1262 TYP. MAX UNIT V -0.6 -100 -100 V μA μA 15 90 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=-2A ;IB1=- IB2=-0.2A RL=10Ω;VCC=-20V 0.25 0.75 0.25 μs μs μs 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1262 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1262 4