2SA1280

JMnic Product Specification Silicon PNP Power Transistors 2SA1280 DESCRIPTION ・With TO-220F package ・High breakdown voltage ・High power dissipation APPLICATIONS ・For use in low frequency power amplifier Color TV vertical deflection output PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -6 -1.5 25 150 -55~150 UNIT V V V A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1280 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 -150 V VCEsat Collector-emitter saturation voltage IC=-500mA;IB=-50mA -3.0 V VBE Base-emitter on voltage IC=-50mA ; VCE=-4V -1.0 V μA μA ICBO Collector cut-off current VCB=-120V;IE=0 -1 IEBO Emitter cut-off current VEB=-6V; IC=0 -1 hFE-1 DC current gain IC=-50mA ; VCE=-4V 60 200 hFE-2 DC current gain IC=-500mA ; VCE=-10V 60 fT Transition frequency IC=-500mA ; VCE=-10V 4 MHz COB Output capacitance IE=0 ; VCB=-100V;f=1MHz 30 pF 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1280 Fig.2 Outline dimensions 3