2SA1288

JMnic Product Specification Silicon PNP Power Transistors 2SA1288 DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Short switching time APPLICATIONS ・Various inductance lamp drivers for electrical equipment ・Inverters;converters ・Power amplification ・Switching regulator ,driver PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -60 -5 -3 -5 30 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA ,RBE=∞ IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-1.5A; IB=-75mA VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-0.5A ; VCE=-2V IC=-0.5A ; VCE=-5V 70 MIN -60 -80 -5 2SA1288 TYP. MAX UNIT V V V -0.4 -100 -100 280 100 V μA μA MHz hFE Classifications Q 70-140 R 100-200 S 140-280 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1288 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3