JMnic
Product Specification
Silicon PNP Power Transistors
2SA1294
DESCRIPTION ・With TO-3PN package ・Complement to type 2SC3263 APPLICATIONS ・Audio and general purpose
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -230 -230 -5 -15 -4 130 150 -55~150 UNIT V V V A A W ℃ ℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat ICBO IEBO hFE Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-25mA ;IB=0 IC=-5A; IB=-0.5A VCB=-230V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=4V IE=0 ; VCB=-10V;f=1MHz IE=2A ; VCE=-12V 50 500 35 MIN -230 TYP.
2SA1294
MAX
UNIT V
-2.0 -100 -100 140
V μA μA
pF MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A;RL=12Ω IB1=-IB2=-0.5A VCC=-60V 0.35 1.5 0.3 μs μs μs
hFE Classifications O 50-100 Y 70-140
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1294
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1294
4
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