2SA1303

JMnic Product Specification Silicon PNP Power Transistors 2SA1303 DESCRIPTION ・With TO-3PN package ・Complement to type 2SC3284 APPLICATIONS ・Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -14 -3 125 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-25mA ;IB=0 IC=-5A ;IB=-0.5A VCB=-150V ;IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=-2A ; VCE=-12V 50 400 50 MIN -150 2SA1303 TYP. MAX UNIT V -2.0 -100 -100 180 V μA μA pF MHz Switching times ton ts tf Turn on time Storage time Fall time IC=-5A;RL=12Ω IB1=-IB2=-0.5A VCC=-60V 0.25 0.85 0.20 μs μs μs hFE Classifications O 50-100 P 70-140 Y 90-180 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1303 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1303 4