2SA1306

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SA1306 VCBO Collector-base voltage 2SA1306A 2SA1306B 2SA1306 VCEO Collector-emitter voltage 2SA1306A 2SA1306B VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -160 -180 -200 -160 -180 -200 -5 -1.5 -0.15 20 150 -55~150 V A A W ℃ ℃ V V UNIT JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA1306 V(BR)CEO Collector-emitter breakdown voltage 2SA1306A 2SA1306B VCEsat VBE ICBO IEBO hFE Cob fT Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency 2SA1306 2SA1306A 2SA1306B CONDITIONS MIN -160 TYP. MAX UNIT IC=10mA , IB=0 -180 -200 V IC=-0.5A, IB=-50mA IC=-0.5A ,VCE=-5V VCB=-160V, IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz IC=-0.1A ; VCE=-10V 70 30 100 -1.5 -1.0 -1.0 -1.0 240 V V μA μA pF MHz hFE Classifications O 70-140 Y 120-240 JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1306 2SA1306A 2SA1306B Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic