2SA1327

JMnic Product Specification Silicon PNP Power Transistors 2SA1327 DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High current capacity APPLICATIONS ・Strobe flash applications ・Audio power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -50 -20 -8 -10 -20 -2 20 W UNIT V V V A A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1327 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IB=0 -20 V VCEsat Collector-emitter saturation voltage IC=-8A; IB=-0.4A -0.5 V VBE Base-emitter on voltage IC=-8A ; VCE=-2V -1.5 V ICBO Collector cut-off current VCB=-50V;IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-8V; IC=0 -1.0 μA hFE-1 DC current gain IC=-1A ; VCE=-2V 100 320 hFE -2 DC current gain IC=-8A ; VCE=-2V 70 COB Output capacitance IE=0 ; VCB=-10V; f=1MHz 400 pF fT Transition frequency IC=-1A ; VCE=-2V 45 MHz hFE-1 Classifications O 100-200 Y 160-320 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1327 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1327 4