2SA1355

JMnic Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage. ・Short switching time. APPLICATIONS ・Various inductance lamp drivers for electrical equipment. ・Inverters, converters ・Power amplifier ・High-speed switching PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SA1355 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -70 -70 -5 -4 30 150 -55~150 UNIT V V V A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA ,IE=0 IC=-1mA ,IB=0 IE=-1mA ,IC=0 IC=-2A; IB=-0.2A IC=-2A; IB=-0.2A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-1A ; VCE=-5V 70 40 MIN -70 -70 -5 TYP. 2SA1355 MAX UNIT V V V -0.5 -1.2 -100 -100 280 V V μA μA MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1355 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3