2SA1360

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1360 DESCRIPTION ・With TO-126 package ・Complement to type 2SC3423 ・High transition frequency APPLICATIONS ・Audio frequency amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 5 150 -55～+150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -50 -5 1.2 W UNIT V V V mA mA JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1360 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0 -150 V VCEsat VBE Collector-emitter saturation voltage IC=-10mA; IB=-1mA IC=-10mA ; VCE=-5V -1.0 V Base-emitter on voltage -0.8 V μA μA ICBO Collector cut-off current VCB=-150V; IE=0 -0.1 IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 hFE DC current gain IC=-10mA ; VCE=-5V 80 240 Cob Output capacitance IE=0 ; VCB=-10V f=1MHz 2.5 pF fT Transition frequency IC=-10mA ; VCE=-10V 200 MHz hFE Classifications O 80-160 Y 120-240 JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1360 Fig.2 Outline dimensions JMnic