2SA1489

2SA1489

  • 厂商:

    JMNIC

  • 封装:

  • 描述:

    2SA1489 - Silicon PNP Power Transistors - Quanzhou Jinmei Electronic Co.,Ltd.

  • 详情介绍
  • 数据手册
  • 价格&库存
2SA1489 数据手册
JMnic Product Specification Silicon PNP Power Transistors 2SA1489 DESCRIPTION ・With TO-3PN package ・Complement to type 2SC3853 APPLICATIONS ・Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -6 -6 -3 60 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors 2SA1489 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -80 V VCEsat ICBO Collector-emitter saturation voltage IC=-2A; IB=-0.2A VCB=-80V; IE=0 -1.5 V μA μA Collector cut-off current -100 IEBO Emitter cut-off current VEB=-6V; IC=0 -100 hFE DC current gain IC=-2A ; VCE=-4V 50 fT Transition frequency IC=0.5A ; VCE=-12V 20 MHz Switching times μs μs μs ton ts Turn-on time IC=-3A;RL=10Ω IB1=-IB2=-0.3A VCC=30V 0.25 Storage time 0.5 tf Fall time 0.1 2 JMnic Product Specification Silicon PNP Power Transistors 2SA1489 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3
2SA1489
1. 物料型号:2SA1489,这是一个PNP型功率晶体管。

2. 器件简介:2SA1489是JMnic Silicon生产的PNP功率晶体管,采用TO-3PN封装,是2SC3853型号的补充。

3. 引脚分配: - 引脚1:基极(Base) - 引脚2:集电极,连接到安装底(Collector; connected to mounting base) - 引脚3:发射极(Emitter)

4. 参数特性: - 集-基极电压(VCBO):-80V,开发射极 - 集-发射极电压(VCEO):-80V,开基极 - 发-基极电压(VEBO):-6V,开集电极 - 集电极电流(IC):-6A - 基极电流(IB):-3A - 集电极功耗(Pc):60W,Tc=25°C - 结温(Tj):150°C - 存储温度(Tstg):-55~150°C

5. 功能详解: - 2SA1489在Tj=25℃的条件下,其主要参数包括: - 集-发射极击穿电压(V(BR)CEO):-80V(IC=-50mA; IB=0) - 集-发射极饱和电压(VCEsat):-1.5V(IC=-2A; IB=-0.2A) - 集电极截止电流(ICBO):-100μA(VCB=-80V; IE=0) - 发射极截止电流(IEBO):-100μA(VEB=-6V; IC=0) - 直流电流增益(hFE):50(IC=-2A; VCE=-4V) - 转换频率(fT):20MHz(IC=0.5A; VCE=-12V)

6. 应用信息:2SA1489适用于音频和通用领域。

7. 封装信息:TO-3PN封装,具体尺寸见图2,未标注的公差为±0.1mm。
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