2SA1494

JMnic Product Specification Silicon PNP Power Transistors 2SA1494 DESCRIPTION ・With MT-200 package ・Complement to type 2SC3858 APPLICATIONS ・Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -6 -17 -5 200 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-10 A;IB=-1 A VCB=-200V; IE=0 VEB=-6V; IC=0 IC=-8A ; VCE=-4V IC=-1A ; VCE=-12V IE=0; VCB=-10V;f=1MHz 50 20 500 MIN -200 2SA1494 TYP. MAX UNIT V -2.5 -100 -100 180 V μA μA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=-10A;RL=4Ω IB1=-IB2=-1A VCC=-40V 0.60 0.90 0.20 μs μs μs hFE classifications Y 50-100 P 70-140 G 90-180 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1494 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1494 4